PART |
Description |
Maker |
29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
MX29LV081B MX29LV081BTC-70 MX29LV081BTC-90 MX29LV0 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International] ETC[ETC]
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
MX29LV065XBI-90 MX29LV065 MX29LV065TC-12 MX29LV065 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29LV081 MX29LV081TC-70 MX29LV081TC-90 MX29LV081T |
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
MX29LV040CQC-70G MX29LV040CTI-90G 29LV040C-55R 29L |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6 1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp. Infineon Technologies AG NEC Corp.
|
UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|